STRUCTURE OF SEMICONDUCTOR ELEMENT

摘要

PURPOSE:To obtain an active layer in which an approximately total surface of a semiconductor element is similar to a mirror surface and to sharply improve an element property, by a method wherein a GaAlAs intermediate location layer having a lower mixed crystal ration than that of a weir layer is positioned between the GaAlAs of the weir layer and an InGaPAs layer of an active layer. CONSTITUTION:After a first weir layer consisting of Ga0.15Al0.85As is grown on an N type GaAs substrate, Ga0.55Al0.45As having a low mixed crystal ratio is grown as an intermediate location layer between the first weir layer and an InGaPAs layer of an active layer. The idealized energy band is as shown in a drawing. This permits the formation of an active layer in which a total surface of a semiconductor element is close to a mirror surface.