| 摘要 |
PURPOSE:To protect a barrier metal, which prevents alloying of a foundation metal with an internal wiring metal, from damaging by a method wherein a through-hole, which connects the internal wiring to an external electrode, is provided at the recessed part on the external circumference of a thick protruded electrode metal as a top layer and the thick protruded electrode metal is formed on the part except the through-hole and its neighborhood. CONSTITUTION:An internal wiring 3 is formed on an insulating film 2 formed on a semiconductor substrate 1 and an insulating film 4, which protects the internal wiring 3 is applied to the insulating film 2 including the internal wiring 3. Then a foundation metal 6, which is connected to the internal wiring 3 through a through-hole 5 formed in the insulating film 4, is applied to the specific region on the insulating film 4 and a barrier metal 7 is applied to it. Further, on a region of the barrier metal 7 whose external circumference has a recessed part at the position of the through-hole 5, a thick protruded electrode metal 8 is piled up and formed. With this constitution, the barrier metal 7 which separates the foundation metal 6 of the protruded electrode from the metal forming the internal wiring 3 is protected from damaging.
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