| 摘要 |
Three dimensional silicon structures are fabricated from {100} silicon wafers by a single side, multiple step ODE etching process. All etching masks (26, 28) are formed one on top of the other prior to the initiation of etching, with the coarsest mask (28) formed last and used first. Once the coarse anisotropic etching is completed, the coarse mask is removed and the finer anisotropic etching is done. The three dimensional structure may be a thermal ink jet channel plate, in which case the etching process is a two-step process in which the coarse etching step provides the ink reservoir (30) and the fine etching step provides the ink channels (32). |
