Reference voltage generator for precharging bit lines of a transistor memory.

摘要

Threshold generator for generating half-VDD sensing potential. The threshold generator will precharge all bit lines (at 20) of a memory array to 1/2-VDD prior to beginning a read of the memory array contents. First (23) and second (27) inverter circuits have threshold voltages selected to represent voltage limits for the bit lines. A voltage drive means (35) is connected to the bit lines along with the inverter circuit inputs. The inverter circuit outputs enable the drive means to supply current or discharge current to and from the bit lines to maintain a voltage potential within the selected voltage limits.