VLSI SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THEREOF

摘要

The semiconductor memory device for improving the integrate of read only memory (ROM) device includes an array of one- transistor memory cell when each cell has an access transistor with a source-drain path and a gate. The threshold voltage is regulated by implantation an impurity at lower part of gate electrode, which provides the information of i" or "O". The gate electrode and the diffused layer is acted as word line and bit line or source line, respectively.