Process of introduction and diffusion of platinum ions in a slice of silicon.

摘要

The process provides for the introduction and the diffusion of platinum ions in a slice of silicon subjected to a succession of thermal steps at high temperature for the accomplishment of at least one semiconductor device, in particular of the MOS or IGBT or bipolar type, and to subsequent steps for the opening of contacts and for surface metallization. The introduction and the diffusion of platinum ions is executed by ionic implant before the metallization step.