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发明名称
SUBSTRATE FOR SEMICONDUCTOR EPITAXIAL GROWTH USE
摘要
申请公布号
JPH04276632(A)
申请公布日期
1992.10.01
申请号
JP19910038287
申请日期
1991.03.05
申请人
FUJITSU LTD
发明人
SUGIYAMA IWAO
分类号
C30B29/68;H01L21/36
主分类号
C30B29/68
代理机构
代理人
主权项
地址
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