Method of adjusting the temperature of a semiconductor wafer

摘要

A method of adjusting the temperature of a semiconductor wafer comprising mounting and attracting the wafer on a susceptor in a process chamber, exhausting and decompressing the process chamber, controlling the temperature of the wafer to become equal to a process temperature while cooling or heating the susceptor, supplying process gas into the chamber to process the wafer with this process gas, and introducing CF4 gas into interstices between the wafer and the susceptor through the susceptor to allow heat exchange to be achieved between them. CF4 gas includes same components as at least some of those of the process gas and it is more excellent in heat transmitting characteristic than helium gas. Even when CF4 gas is leaked into a process area, therefore, any influence is not added to the process.