发明名称 SEMICONDUCTOR READ ONLY MEMORY
摘要 <p>PURPOSE:To improve an access time for data by making output buffer operation an incapable state by a detection output generating at the time of switching a row line. CONSTITUTION:In an output buffer control circuit 12, when the output ENB of a row decoder output transition detection circuit 11 is an H level, an output buffer 7 is made an operation enable state by generating complementary output enable signals OTEN, -OTEN when a read enable signal RDEN is inputted. When the output ENB of the circuit 11 is an L level, the input of the signal RDEN is prohibitted, and the buffer 7 is controlled to a non-operation state. Then, no zero glitch occurs in output data for the non-operation interval of the output buffer, and the output data changes as 1 1 or 0 1. In such a manner, in the read mode of the output data in 1 1 or 0 1, even when a delay in a row selection signal due to the presence of resistance and load capacitance in the row line occurs, the occurrence of the zero glitch at the time of switching the row line is prevented, and time access for 1 data is improved.</p>
申请公布号 JPH0636580(A) 申请公布日期 1994.02.10
申请号 JP19920190355 申请日期 1992.07.17
申请人 TOSHIBA CORP;IWATE TOSHIBA ELECTRON KK 发明人 OIKAWA KIYOHARU;YAGI TAKESHI
分类号 G11C17/00;G11C16/06;G11C17/18;(IPC1-7):G11C16/06 主分类号 G11C17/00
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