| 摘要 |
PURPOSE: To improve a semiconductor device, more precisely, metal-insulator- semiconductor(MIS) transistor structure, especially, an MOS type semiconductor device, whose insulator is an oxide. CONSTITUTION: At the gate electrode of MOS transistor 100, the transistor has a thin film polysilicon substrate 10 or a bulk monocrystal substrate and the gate has a pair of adjacent areas 32-1 and 32-3, namely, a heavily doped gate electrode area near a source 11 and a heavily doped gate electrode near a drain 13. When a voltage is impressed for turning off the transistor, the gate electrode area near the drain is doped with extremely low density for decreasing an electric field in one part of channel area arranged near the drain. When a suitable voltage is impressed, on the other hand, impurity sufficient for turning on the transistor is implanted into the gate electrode area near the source. |
