| 摘要 |
Generally, and in one form of the invention, an integrated circuit comprising a bipolar transistor and a field effect transistor, wherein a channel of the field effect transistor and a base of the bipolar transistor are formed from a base epitaxial layer 16, and whereby field effect and bipolar transistors are formed within a common material structure is disclosed. In another form of the invention, an integrated circuit comprising a substrate 10, an epitaxial subcollector layer 12, an epitaxial collector layer 14, an epitaxial base layer 16, an epitaxial emitter layer 18, a bipolar transistor formed with an emitter electrical contact 20, 28, 35 to the emitter layer 18, a base contact 34 to the base layer 16, and a collector contact 42 to the subcollector layer 12, and a field effect transistor formed with a first gate contact 20, 30, 39 to the emitter layer 18, a first source contact 36 to the base layer 16, and a first drain contact 37 to the base layer 16, is disclosed.
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