| 摘要 |
<p>The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radiofrequency generator (15). The device includes means (23) for extracting gas from the chamber (12) and means (18) for supplying gas. The device also comprises means for purification (31) of the gases introduced into the chamber, these means being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (12), purifying the gases using purification means (31), introducing these purified gases into the chamber (12), then creating a plasma between the electrodes (13, 14). A film of intrinsic microcrystalline silicon is then deposited on the substrate.</p> |
