MICROWAVE POWER SOI-MOSFET WITH HIGH CONDUCTIVITY METAL GATE

摘要

A technique for making a microwave, high power SOI-MOSFET device is set forth together with such a device. An important aspect of this structure is the presence of high conductivity metal gate fingers for the device. Other aspects of the structure are the forming of a retrograde doping profile in a thin silicon layer and the forming of a source region comprising a source shield.