| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a wide area enabling a wiring, where semiconductor elements are mounted and packaged at high density and deformations such as warpage is suppressed. SOLUTION: A semiconductor device has Cu wiring layers 23 on both surfaces of an insulative resin film 11 having the same thickness as a semiconductor chip, and inner lead groups 13 are disposed on the lower surface. Via holes 14 conductive with the wiring layers 12 on both surfaces are provided at specified positions, solder bumps 18 are arranged grid-like on the lower face wiring layer 12. Two upper and lower stages of semiconductors chips 16b, 16a are mounted, the lower stage of the chip is fit in device holes 11a and inner-lead bonding(ILB), the upper stage of the chip is flip-chip connected to the upper surface wiring layer 12. A resin encapsulation layer 17 covers these bonded parts and is integrated with a Cu cover plate 19 thereon. |
