| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device for improving sensing capability. SOLUTION: This device includes a memory cell array 100 having a plurality of memory cell blocks which respectively include bit lines, a column decoder 200 for generating a plurality of decoding signals, first bias/ground selection control circuit 400 for generating a plurality of first bias/ground selection signals, first bias/ground selection circuit 500 for judging the bias condition of the plurality of bit lines, second bias/ground selection control circuit 420 for generating a plurality of second bias/ground selection signals, and second bias/ground selection circuit 520 for judging the bias condition of the plurality of bit lines of another group according to the second selection signal.</p> |
