发明名称 OVERLAID MAGNETORESISTIVE ELEMENT
摘要 PROBLEM TO BE SOLVED: To prevent enlargement of a signal read width because of an overlaid structure and enhance a current utilization efficiency in relation to an overlaid magnetoresistive element. SOLUTION: Magnetic domain control films 7 are set at ends of a magnetoresistive film 6. A pair of terminal films 10 are set above the magnetoresistive film 6 and magnetic domain control films 7 for flowing a current to the magnetoresistive film 6. Moreover, the thickness of a part which becomes a lower part of a terminal part of an antiferromagnetic layer 5 constituting the magnetoresistive film 6 is made smaller than the thickness of a part without the terminal films 10. Detecting a current at an overlap part which is a trouble in an overlap structure is limited to a minimum, and therefore a core width and a good sensitivity to cope with a reduction in track width for a high recording density can be obtained.
申请公布号 JP2000285414(A) 申请公布日期 2000.10.13
申请号 JP19990085250 申请日期 1999.03.29
申请人 FUJITSU LTD 发明人 KISHI HITOSHI
分类号 G11B5/39;(IPC1-7):G11B5/39 主分类号 G11B5/39
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