| 摘要 |
PROBLEM TO BE SOLVED: To realize the electrode structure of a semiconductor element, in which the semiconductor element can be surface mounted on a circuit board directly, without requiring a lead terminal or an insulation coating. SOLUTION: A large number of emitter cones 34 are formed counterposed to the faces of first and second Si substrates 48, 48 disposed counterposed, and in a state where a specified gap is formed between the emitter cones of one Si substrate and the inner surface or emitter cones of the other Si substrate, the first and second Si substrates 48, 48 are bonded and then cut to form the electrode of a field-effect electron emission surge-absorbing element 10. In such a method for forming electrode, a recess 76, including a cutting part 74 of the Si substrate and having width dimensions larger than the cutting dimensions of the cutting part 74, is made in the surface of the first Si substrate 48 and the rear surface of the second Si substrate 48. Subsequently, a first outer electrode 38 is formed on the surface 78a of the first Si substrate and on the inner surface of the recess thereof, a second outer electrode 40 is formed on the rear surface 78b of the second Si substrate 48 and on the inner surface of the recess thereof, and then the first and second Si substrates 48 are cut along the cutting part 74 in the recess 76.
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