发明名称 RESIST RESIDUES REMOVING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a resist residues removing method without deterioration of a semiconductor device as recesses on the layer insulation films, spread connection holes or roughed wirings, etc. SOLUTION: A process sequence involving a peeling liquid process using a fluoric peeling liquid for a process time so shortened as not deteriorating a semiconductor device is repeated at least twice.
申请公布号 JP2002158206(A) 申请公布日期 2002.05.31
申请号 JP20000350856 申请日期 2000.11.17
申请人 MITSUBISHI ELECTRIC CORP 发明人 MURANAKA MASASHI
分类号 G03F7/40;B08B3/08;G03F7/42;H01L21/027;H01L21/304;H01L21/306;H01L21/768;(IPC1-7):H01L21/306 主分类号 G03F7/40
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