| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which reduces irregularities of a resist form and can form a plurality of cylinder type capacitors precisely. SOLUTION: This method for manufacturing a semiconductor device is provided with a process for laminating a first insulating film 6 and a mask layer 7 on a first conducting layer 5, a process for etching the mask layer 7 by using resist 8 as a mask and forming a hard mask, a process for etching the first insulating film 6 by using the hard mask as a mask after the resist is eliminated, and forming a sacrifice mask, a process for eliminating the hard mask, a process for eliminating the first conducting layer 5 except a lower part of the sacrifice film, a process for forming a second conducting layer 9 on the side surface of the sacrifice film, a process for eliminating the sacrifice film, and a process for forming a third conducting layer 11 on the surfaces of the first and second conducting layers 5, 9 via a second insulating film 10.
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