| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacturing method where peeling of insulating film on a copper film or a copper wiring can be prevented and the permittivity of the insulating film between wirings composed of the copper film, etc., can be lowered while keeping high barrier property and small leakage current as opposed similar to a silicon nitride film, when a wiring interlayer insulating film in which a contact conductor is buried and a wiring buried insulating film in which a copper wiring is buried. SOLUTION: In this method for manufacturing a semiconductor device, the wiring interlayer insulating film 34 is formed by making either alkoxy compound having a Si-H bond or siloxane having a Si-H bond and a film forming gas composed of either one of oxygen-containing gas, O2, N2O, NO2, CO, CO2 or H2O into plasma and react each other.
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