| 摘要 |
An interconnection structure comprises: an interlayer insulating film; and first interconnection layer to which low potential is applied and second interconnection layer to which high potential is applied when the interconnection structure is used, formed with the interlayer insulating film therebetween; and a via hole formed in the interlayer insulating film for electrically connecting the first interconnection layer and second interconnection layer. Overlap regions including regions of the first interconnection layer and the second interconnection layer faced said via hole are formed for both the first interconnection layer and second interconnection layer. The shortest distance from the edge of the via hole contact region to the end of the interconnection in the overlap region of the first interconnection layer is greater than the shortest distance from the edge of the via hole contact region to the interconnection end in the overlap region of the second interconnection layer, and is no more than 50 mum. Also, the interconnection resistance of the first interconnection layer is greater than the interconnection resistance of the second interconnection layer.
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