发明名称 ALIGNMENT MARK
摘要 <p>PROBLEM TO BE SOLVED: To provide an alignment mark that can be formed on a sensitive substrate, such as the wafer, etc., and enables the position of the substrate to be detected with high accuracy even when exposure is performed by means of a charged particle beam exposure system using a stencil mask. SOLUTION: This alignment mark is used for the optical aliment performed by means of a charged particle beam exposure system using the stencil mask. This mark is compatible with the alignment mark used for optical alignment performed by means of the other exposure system than the charged particle beam exposure system and can be formed on the stencil mask. This alignment mark is divided into parts by providing beams in this mark when this mark is used for the optical alignment performed by means of the other exposure system than the charged particle beam exposure system.</p>
申请公布号 JP2002260997(A) 申请公布日期 2002.09.13
申请号 JP20010062887 申请日期 2001.03.07
申请人 NIKON CORP 发明人 UDAGAWA HITOSHI;HIRAYANAGI NORIYUKI
分类号 G03F1/42;G03F7/20;G03F9/00;H01J37/304;H01J37/305;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/42
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