| 摘要 |
<p>PURPOSE:To stabilize characteristics of TFTs by using light transparent drain electrodes, source electrodes and display electrodes. CONSTITUTION:The gate electrodes 2 made of Cr are provided on a transparent insulating substrate 1 consisting of glass, etc., and further gate insulating films 9 consisting of silicon oxide or silicon nitride are provided. Semiconductor films 5 made of a-Si are provided on the films 9. The left side thereof is coated with the drain electrodes 6 made of ITO and the right side with the source electrodes 7 made of ITO. Drain lines 4 are laminated on a part of the electrodes 6. The contact resistance of the drain lines with drain electrodes and the contact resistance of the semiconductor films with the source electrodes and the drain electrodes are lowered in this way and the TFTs having the stable characteristics are obtd.</p> |
