NON-VOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A nonvolatile memory device and its manufacturing method are provided to reduce an erase time of the device by decreasing back tunneling of electrons through a blocking layer using a buffer layer capable of preventing the variation of a work function in a conductive layer due to a heat treatment. A tunnel insulating pattern(134) is formed on a channel region of a substrate(100). A charge trapping pattern(132) is formed on the tunnel insulating pattern to trap electrons from the channel region. A blocking pattern(130) is formed on the charge trapping pattern. A conductive pattern containing a metal is formed on the blocking pattern. A barrier pattern(116) is formed on the conductive pattern to prevent the variation of a work function of the conductive pattern.