| 摘要 |
<p>A semiconductor device exhibiting excellent device characteristics in which the V<SUB>th</SUB> of an nMOS transistor and a pMOS transistor is controlled to a desired value. The semiconductor device has a pMOS transistor and an nMOS transistor formed by using an SOI substrate, characterized in that the pMOS transistor is a complete depletion type transistor having an n-type region, a first gate electrode, a first gate insulation film, and a source/drain region, the nMOS transistor is a complete depletion type transistor having a p-type region, a second gate electrode, a second gate insulation film, and a source/drain region, the first gate electrode has a silicide region (1) including an NiSi crystal phase containing n-type impurities touching the first gate insulation film, and the second gate electrode has a silicide region (2) including an NiSi crystal phase containing p-type impurities touching the second gate insulation film.</p> |
