| 发明名称 |
HEAT TREATMENT METHOD AND HEAT TREATMENT APPARATUS |
| 摘要 |
<p>Disclosed is a heat treatment method comprising a step for placing a wafer (W) provided with a low-k film and a wiring layer in a heat treatment furnace (41), a step for supplying gaseous acetic anhydride into the heat treatment furnace (41), while controlling the flow rate using a mass flow controller (44d), and a step for heating the wafer (W) in the heat treatment furnace (41) supplied with gaseous acetic anhydride by using a heater (41b) provided to the heat treatment furnace (41).</p> |
| 申请公布号 |
WO2008015915(A1) |
申请公布日期 |
2008.02.07 |
| 申请号 |
WO2007JP64201 |
申请日期 |
2007.07.18 |
| 申请人 |
TOKYO ELECTRON LIMITED;MIYOSHI, HIDENORI;NARUSHIMA, MASAKI |
发明人 |
MIYOSHI, HIDENORI;NARUSHIMA, MASAKI |
| 分类号 |
H01L21/3205;H01L21/312 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
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