| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming method enabling excellent immersion lithography by preventing water remaining and entering a wafer edge and a rear face after exposure. <P>SOLUTION: The pattern forming method using the immersion lithography exposing a resist film formed on a substrate in liquid uses silane or silazane having 1-14C alkyl group, and a substrate silylated by silane having 3-13C alkyl group substituted by at least one fluorine atom. The pattern forming method using the immersion lithography can prevent water from remaining and entering the wafer edge and the rear face after exposure by using the substrate with enhanced wafer repellency. <P>COPYRIGHT: (C)2008,JPO&INPIT |
