Technique for creating different mechanical strain by a contact etch stop layer stack with an intermediate etch stop layer

摘要

The present invention provides a technique for forming differently stressed contact etch stop layers, wherein sidewall spacers are removed prior to the formation of the contact etch stop layers. During the partial removal of respective contact etch stop layers, a corresponding etch stop layer regime is used to substantially avoid any unwanted stress-inducing material residuals, thereby significantly enhancing the stress transfer mechanism.