| 摘要 |
<p>An ultra high-resolution radiation detector and method for fabrication thereof, has a detector chip, comprising the so-called drift rings (12) and an amplifier integrated with the diode component, centrally located n-type anode (16) on one surface and the depletion region located on the oposite surface (14). The detector chip has a circular field of view, the depletion region which also has a circular field of view by ion implanting symmetrical p-n junctions on the surface of the radiation entrance side of the detector chip, said centrally n-type anode (16) located on the opposite surface (14) of the depletion region, and its position is in the region which is outside of the depletion region, said centrally n-type anode (16) was surrounded by a plurality of p-type drift electrode rings (12), which have an gibbous circularity topology; wherein the focus of said p-type drift electrode rings (12) is the position of the anode (16), said FET (Field-Effect Transistor) (11) was integrated in the position of the detector's anode (16) and directly coupled to the detector's anode (16). The p-type drift electrode rings (12) consist of a plurality of drift rings (12) which have gibbous circularity topology, wherein the gibbous circularity topology is encircled by a majority of a large circularity (121) and a small circularity (122), wherein the maximum of the depletion region is on the opposite surface (14) of the region encircled by the outermost p-type drift electrode ring (12).</p> |
