发明名称 VOLTAGE TOLERANT FLOATING N-WELL CIRCUIT
摘要 Methods and apparatuses are presented for voltage tolerant floating N-well circuits. An apparatus for mitigating leakage currents caused by input voltages is presented which includes a first transistor having a source coupled to a positive voltage supply, and a drain coupled to a floating node. The apparatus may further include a controllable pull down path coupled to a negative voltage supply and the first transistor, wherein the controllable pull-down path is configured to turn on the first transistor and pull-up the floating node during a first state. The apparatus may further include a second transistor having a source coupled to a gate of the first transistor, and drain coupled to the floating node, wherein the second transistor is configured to place the floating node at a floating potential during a second state.
申请公布号 WO2009018285(A3) 申请公布日期 2009.03.19
申请号 WO2008US71494 申请日期 2008.07.29
申请人 QUALCOMM INCORPORATED;GUPTA, ABHEEK;SRINIVAS, VAISHNAV;MOHAN, VIVEK 发明人 GUPTA, ABHEEK;SRINIVAS, VAISHNAV;MOHAN, VIVEK
分类号 H03K19/003 主分类号 H03K19/003
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