| 摘要 |
The present invention provides a memory element includes a thin film transistor configured to have a semiconductor thin film and a pair of gate electrodes that vertically sandwich the semiconductor thin film with intermediary of insulating films therebetween, and a capacitor configured to be connected to a first gate electrode of the pair of gate electrodes, wherein data is stored in the capacitor connected to the first gate electrode, and data stored in the capacitor is read out by controlling a second gate electrode of the pair of gate electrodes.
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