MANUFACTURING APPARATUS AND MANUFACTURING METHOD OF GROUP III NITRIDE SEMICONDUCTOR ELEMENT, AND SEMICONDUCTOR WAFER MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing apparatus and a manufacturing method of a group III nitride semiconductor element and a semiconductor wafer manufacturing method, which are suitable for mass production and achieve growth of a group III nitride semiconductor at lower temperature than ever before.SOLUTION: A manufacturing apparatus of a group III nitride semiconductor element comprises: a first gas supply pipe 1300 which has at least one first gas exhaust nozzle and supplies an organic metal gas containing group III metal as a first gas; a shower head electrode 1100 arranged at a position farther than the first gas exhaust nozzle of the first gas supply pipe 1300 when viewed from a susceptor 1200; and a second gas supply pipe which supplies as a second gas, a mixed gas containing a nitrogen gas and a hydrogen gas. A mixture ratio of the hydrogen gas in the mixed gas supplied by the second gas supply pipe is represented as a volume flow rate within a range of not less than 5% and not more than 45%.SELECTED DRAWING: Figure 1