发明名称 HIGH LINEARITY CMOS RF POWER AMPLIFIERS IN WIFI APPLICATIONS
摘要 An RF power amplifier biasing circuit has a start ramp signal input, a main current source input, an auxiliary current source input, and a circuit output. A ramp-up capacitor is connected to the auxiliary current source input. A ramp-up switch transistor is connected to the start ramp signal input and is selectively thereby to connect the auxiliary current source input to the ramp-up capacitor. A buffer stage has an input connected to the ramp-up capacitor and an output connected to the main current source input at a sum node. A mirror transistor has a gate terminal corresponding to the circuit output and a source terminal connected to the sum node and to the gate terminal.
申请公布号 WO2016040688(A3) 申请公布日期 2016.09.09
申请号 WO2015US49501 申请日期 2015.09.10
申请人 RFAXIS, INC. 发明人 GORBACHOV, Oleksandr;LI, Qiang;ASHBAUGH, Floyd;SEYEDI, Aydin;MUSIOL, Lothar;ZHANG, Lisette L.
分类号 H03G3/20;H04B1/04 主分类号 H03G3/20
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