| 发明名称 |
SEMICONDUCTOR SURFACE BARRIER DIODE OF SCHOTTKY TYPE AND METHOD OF MAKING SAME |
| 摘要 |
A semiconductor surface barrier diode of Schottky type comprising a contact of semiconductor and metal or a compound of the metal and the semiconductor, wherein the contact surface forming a barrier is formed remarkably uneven so as to adjust the barrier height.
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| 申请公布号 |
US3642526(A) |
申请公布日期 |
1972.02.15 |
| 申请号 |
USD3642526 |
申请日期 |
1969.03.06 |
| 申请人 |
HITACHI LTD. |
发明人 |
YOKICHI ITOH;NORIKAZU HASHIMOTO |
| 分类号 |
H01L21/00;H01L29/00;H01L29/47;(IPC1-7):H01L7/44;H01L7/50 |
主分类号 |
H01L21/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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