发明名称 CMOS MEMORY DECODER CIRCUIT
摘要 <p>PURPOSE:To draw easily a decoder pattern and to speed up the processing, by splitting an decoder output into a plurality. CONSTITUTION:An output of a NAND gate NA is received at a CMOS inverter 30, three sets n-channel MOS transistors 32 are used for pulldown, and the gates are connected to remaining 3-word line. When the NAND gate NA produces an L level output and selects word line groups W0-W3, a clock at an H level out of clocks phi00-phi11 is applied to the inverter 30, the said one inverter produces the H level output and selects one word line. A ROM cell group 40 is wired to bit lines B0, B1, B2....</p>
申请公布号 JPS57105884(A) 申请公布日期 1982.07.01
申请号 JP19800183074 申请日期 1980.12.24
申请人 FUJITSU KK 发明人 SUZUKI YASUO;NAGASAWA MASANORI
分类号 G11C11/41;G11C11/413;G11C11/418;G11C17/12;G11C17/18;H03M7/00 主分类号 G11C11/41
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