| 摘要 |
<p>PURPOSE:To secure bonding property at the part of a wire bonding pad and improve the corrosion resistance and the moisture resistance at the part other than it by a method wherein an aluminum wiring except for the wire bonding pad is treated in corrosion resistance by Ni ion implantation and the like. CONSTITUTION:A semiconductor element region by impurity selective diffusion is formed at part of the surface of an Si crystal substrate 1, which is then provided with a surface oxide film 2, the aluminum wiring 3, a passivation insulation film 4, and the like. This insulation film is partly window-opened, the exposed aluminum surface serving as the bonding pad part; then, an Au wire 5 is wire-bonded. For example, at least the surface of the wiring except that the bonding pad part is made of Al and Ni layers 6 containing Ni. Or, using Al-Si containing Si (approx. 2-5%) in place of pure aluminum for the wiring, at least the surface except that the bonding pad part can be made of Al-Si-Ni layers containing Ni.</p> |
