| 摘要 |
PURPOSE:To reduce deep trap level concentration resulting from a crystal defect by implanting ions, conducting capless annealing or cap annealing, coating regions except an ion implanting layer with an insulating film and plasma- treating the whole in hydrogen plasma. CONSTITUTION:Si ions are implanted to a semi-insulating un-doped LEC-method GaAs substrate 1 while using a photo-resist film 2 as a mask to form an implanting region 3. The photo-resist film 2 is removed, the substrate is surface- treated by an acid, an organic solvent, etc. and cap-less annealing is conducted in an AsH3 atmosphere in a core tube. The surface except the ion implanting region 3 is coated with an Si3N4 film 4, the substrate 1 is admitted into a plasma device 5, H2 gas is introduced from a gas introducing port 7 while heating the substrate 1 by a heater 6, H2 plasma is shaped by a high-frequency power supply 8, and the substrate is treated by H2 plasma. Accordingly, the ion implanting region having low deep trap concentration is acquired. |
