| 摘要 |
<p>PURPOSE:To improve antiabrasion, oxidation resistance and chemical stability by providing a mixed layer of silicon carbide and silicon dioxide on the surfacial part of a protective film and limiting the content of silicon dioxide to a specific range. CONSTITUTION:A thermal head is provided with a substrate 1, a thermal resistance 3 formed on the substrate, a lead wire 4 which is electrically connected to the thermal resistance 3 and a protective film 5 formed to cover the upper surface of the thermal resistance 3. A mixed layer of silicon carbide and silicon dioxide is provided at least on the surfacial part of the protective film 5. The content of silicon dioxide of the mixed layer ranges from 10mol% or more to 20mol% or less. The protective film formed at such mixture ratio has the hardness which is slightly lower than a protective film formed only of silicon carbide, but which is adequate to withstand use like the one formed with the conventional trisilicon tetranitride.</p> |
