SEMICONDUCTOR OPTICAL CIRCUIT DEVICE

摘要

PURPOSE:To protect an insulating layer against deterioration caused by heat by a method wherein an insulating layer is formed of a semiconductor layer insulated by having an intrinsic defect provided with a deep energy level between a conductive belt and a valence electron belt. CONSTITUTION:A laminated body 6 formed of a stripe-like section 7 is constructed on a semiconductor substrate 1, and a semiconductor layer of p-type InP is formed. A electron beam is irradiated onto the semiconductor layer. Next, a thermal annealing treatment is performed in a nitrogen atmosphere. P atoms move to an In lattice site to form an antisite fault of P atoms as an intrinsic defect. The intrinsic defect has a deep energy level between a conductive belt and a valence electron belt, so that the semiconductor layer is insulated.