| 摘要 |
When a semiconductor chip (1) is bonded to the inner leads (6) of a tape carrier (5), an excessive alloy layer (9) is melted and flow to the edge part of the semiconductor chip (1) making the semiconductors defective. In order to solve the problem, bumps (11) are formed on the electrodes (2) of the semiconductor chip (1) by bonding metal balls which are formed onto the electrodes (2) by melting the tip of a metal wire, plating layers are formed on theinner leads (6), the plating layers are melted while the inner leads (6) are aligned with the bumps (11) and thus the semiconductor chip (1) is bonded to the inner leads (6) through the alloy layers (9). In this construction, a plurality of the bumps (11) are formed on each electrode (2) to increase the force to hold the alloy layer (9) and the flow of the alloy layer (9) is blocked. |
