发明名称 |
Integrated solid state memory |
摘要 |
A modem solid memory has a matrix of memory cells (SZ) that are coupled to bit lines (BL,BL') and word lines (WL). Each pair of bit lines are coupled to a circuit (BWS) with gating transistors (TT) connected to bit line decoder circuitry (DEC). Selection of the pairs of bit lines is made using an external circuit (BWS ext) via a multiplexer (MUX). The gating stages (TT) provide for separate operation of the bit line pairs (BL,BL') such that if any error condition occurs the control circuit will not change state.
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申请公布号 |
DE3920871(A1) |
申请公布日期 |
1991.01.03 |
申请号 |
DE19893920871 |
申请日期 |
1989.06.26 |
申请人 |
SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE |
发明人 |
LUSTIG, BERNHARD, DR.RER.NAT., 8000 MUENCHEN, DE |
分类号 |
G11C11/4094;G11C11/4096;G11C29/18;G11C29/30 |
主分类号 |
G11C11/4094 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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