发明名称 Integrated solid state memory
摘要 A modem solid memory has a matrix of memory cells (SZ) that are coupled to bit lines (BL,BL') and word lines (WL). Each pair of bit lines are coupled to a circuit (BWS) with gating transistors (TT) connected to bit line decoder circuitry (DEC). Selection of the pairs of bit lines is made using an external circuit (BWS ext) via a multiplexer (MUX). The gating stages (TT) provide for separate operation of the bit line pairs (BL,BL') such that if any error condition occurs the control circuit will not change state.
申请公布号 DE3920871(A1) 申请公布日期 1991.01.03
申请号 DE19893920871 申请日期 1989.06.26
申请人 SIEMENS AG, 1000 BERLIN UND 8000 MUENCHEN, DE 发明人 LUSTIG, BERNHARD, DR.RER.NAT., 8000 MUENCHEN, DE
分类号 G11C11/4094;G11C11/4096;G11C29/18;G11C29/30 主分类号 G11C11/4094
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