| 摘要 |
The amplifier for increasing the margin width of the sensing noise of ROM without reducing the sensing speed includes a PMOS transistor (PM2) receiving the dummy line current (IDUM) and a bit line voltage (VBIT), and another PMOS transistor (PM3) receiving the dummy line voltage (VDUM). The two transistors are formed to latch respectively. The transistor (PM2) is active or not according to the bit line voltage, but another one (PM3) accords the dummy line voltage so that the difference between the bit and dummy line voltages is increased. The PMOS transistors (PM 1,4) are for preventing the miss operation of the transistors (PM 2,3).
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