Kapazitiver Mikrosensor mit seitlichem Schutz und Verfahren zu dessen Herstellung

摘要

The present invention relates to a capacitive micro-sensor comprising a sandwich of three silicon wafers (1, 2, 3), a peripheral strip of each surface of the central wafer being applied to a corresponding strip of the facing surface of an external wafer by way of an insulating strip (5, 6), characterised in that the lateral surfaces of the said sandwich are notched near the outcrop of each of the said insulating strips.