| 摘要 |
PURPOSE:To precisely control the diffusion depth extending over the whole wafer by a method wherein a layer in specific composition is used as a diffusion stopper layer or a diffusion mask on the specific depth position of an AlGaInP layer. CONSTITUTION:In order to diffuse Zn on the Zn diffusion part 7 of an AlGaInP layer 2, Al2Ga1-xAs (0<=x<=1) is set up as a diffusion stopper layer 3 or a diffusion mask. 4 in the specific diffusion depth in the AlGaInP layer 2. At this time, Zn is diffused using the layers 3, 4 at the slower diffusion rate than that of the layer 2 so that the Zn diffusion depth may be controlled. Furthermore, Zn can be diffused using the diffusion mask 4 comprising Al2Ga1-xAs layer continuously deposited by the same deposition device as that of respective layers, forming elements. |
