PRODUCTION OF SILICON CARBIDE SINGLE CRYSTAL

摘要

PROBLEM TO BE SOLVED: To obtain a silicon carbide single crystal with reduced defects by clogging the micro-pipe defects distributing inside the substrate of silicon carbide single crystal. SOLUTION: A silicon carbide substrate as a raw material, particularly a silicon carbide single crystal substrate 2 and silicon carbide substrates 1a and 1b different in its crystalline form from that of the single crystal substrate 2 are arranged so that it may come into contact with both faces of the single crystal substrate having the micro-tube defects and they are heat-treated in a crucible 6. Thus, the silicon carbide vapor is vaporized and re-crystallized in the microtube defects whereby the defects of micro-pipes are clogged 3.