| 摘要 |
<p>PROBLEM TO BE SOLVED: To ensure a large MR change rate of a spin valve film, satisfy low magnetostriction constant, and impart superior soft magnet characteristic. SOLUTION: This magnetoresistive effect element is provided with a first magnetic layer 1, a second magnetic layer 2, a spin valve film 6 having a nonmagnetic layer 3 interposed between the layers 1 and 2, and a pair of electrodes 16 which supply a sensor current to the spin valve film 6. In at least one magnetic layer out of the first and the second magnetic layer 1, 2, the denset surface of crystal grains constituting the layer is dispersed isotropically. The magnetic layer such as this can be obtained with high reproducibility, by making the thickness of a substratum layer having the same crystal structure as the magnetic layer less than, e.g. 2.0 nm and making the denset layer of crystal grains constituting the substratum layer isotropically disperse.</p> |
