| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a means not short-circuiting between a pixel electrode and an under layer first storage capacity electrode even when a pin hole exists in an upper layer second storage capacity electrode forming storage capacity, related to a thin film transistor matrix substrate used for a liquid crystal display device, etc. SOLUTION: In a thin film transistor, a gate electrode 2 and the first storage capacity electrode 3 are formed on a transparent insulation substrate 1, and a gate insulation film-cum-storage capacity insulation film and an operation semiconductor electrode are formed on that, and a source electrode 11, a drain electrode 12 and the second storage capacity electrode 13 are formed on that, and a second layer insulation film is formed on that, and a contact hole 15 arriving at the source electrode 11 and the second storage capacity electrode 13 is formed on the second layer insulation film, and the pixel electrode formed on that is connected to the source electrode 11 and the second storage capacity electrode 13 through the contact hole 15, and at least partial width of the second storage capacity electrode 13 is made larger than the width of the first storage capacity electrode 3, and the contact hole 15 is formed on the part that the second storage capacity electrode projects outward the first storage capacity electrode 3.</p> |
