| 摘要 |
PROBLEM TO BE SOLVED: To reduce resistances of word lines, to suppress junction leakage, to reduce the contact resistance and dimensions of a DRAM cell by increasing contact areas between diffused layers and drawing-out electrodes, to secure withstand voltage between the word lines and the drawing-out electrodes, and to suppress a short channel effect by extending an effective channel length in a DRAM, and to stabilize transistor characteristics. SOLUTION: This semiconductor device has word lines 16, which are embedded via gate insulating films 15 in grooves 14 formed in a semiconductor substrate 11 and in element isolation regions 12 formed in the semiconductor substrate 11, first diffused layers 13 formed on the semiconductor substrate 11 surface side of the sidewalls of the grooves 14, silicide layers 18 formed on the upper layers of the word lines 16, and drawing-out electrodes 21 which are connected with the first diffused layers 13, while overlapping the word lines 16 via first insulating films 19. The word lines 16 are formed in the grooves 14, and the impurity concentrations of the first diffused layers 13 are reduced gradually in the depth directions.
|
