METHOD AND APPARATUS FOR 3-5-FAMILY COMPOUND SEMICONDUCTOR EPITAXIAL GROWTH

摘要

PROBLEM TO BE SOLVED: To reduce the number of surface particles that are generated when a 3-5-family compound semiconductor epitaxial crystal layer is grown on a semiconductor substrate by the organic metal vapor growth method. SOLUTION: When a feed gas is supplied into a reactor 2, and the 3-5-family compound semiconductor epitaxial crystal layer is grown on the semiconductor substrate 3 by the MOCVD method, the amount of dust generated in the reactor 2 is reduced by reducing temperature in the surface of a region X on an inner surface 21a of a case 21 of the reactor 2 opposite to the semiconductor substrate 3 by controlling the flow rate of cooling water 42 that flows to a cooler 4 provided outside the case 21.