METHODS FOR DRY PLASMA ETCHING AND FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide methods for dry plasma etching and for manufacturing a semiconductor device, causing no charging damage. SOLUTION: A method for etching a conductive film 12 connected electrically to the electrode on the gate oxide film 6 formed on a substrate 2, thereby a mask 15 consisting of conductive materials is formed on the conductive film 12 and the conductive film 12 is etched using the mask 15.